2002 · 30 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDopingSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor ReliabilityAnnealingCarrier Transport In SemiconductorsHeterojunction Bipolar TransistorsHeterojunction DevicesInterstitial DiffusionReliability DegradationThermal AnnealingThermal Annealing Effects
Current induced degradation of I/V characteristics in AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with Be-doped base layer was investigated. Shifts of emitter-base on-voltage up to 60 mV were observed during high current operation. The results show that thermal annealing of the samples during the Zn diffusion process can successfully stabilize the characteristics. Zn diffusion into the extrinsic base layer is capable of effectively lowering the generation-recombination current. The findings suggest that the effects of the Zn diffusion process on characteristics can be explained by less interstitial Be diffusion toward the emitter associated with decreased generation-recombination current.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
3
A 34.8 GHz 1/4 static frequency divider using AlGaAs/GaAs HBTs
Y. Yamauchi, O. Nakajima, K. Nagata et al. · 2003 · 41 citations
Ultra-high speed AlGaAs/GaAs heterojunction bipolar transistors
Tadao Ishibashi, O. Nakajima, Koichi Nagata et al. · 2003 · 19 citations