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A new three dimensional IC fabrication technology, stacking thin film DUAL-CMOS layers
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1991
Year
Unknown Venue
EngineeringNovel 3-D IcIntegrated CircuitsNew ThreeInterconnect (Integrated Circuits)Wafer Scale ProcessingAdvanced Packaging (Semiconductors)NanoelectronicsCmos TechnologyIntegrated Circuit DesignElectronic PackagingMaterials Science3D Ic ArchitectureElectrical EngineeringSemiconductor Device FabricationMicroelectronicsElectrical Function BlocksMicrofabricationApplied PhysicsFunction BlocksThree-dimensional Integrated CircuitsBeyond Cmos3D Integration
A novel 3-D IC has been developed in which electrical function blocks of thin-film dual-active-device-layer (DUAL) CMOS ICs are bonded cumulatively. In the DUAL-CMOS ICs, pMOSFETs are stacked on nMOSFETs by using a laser beam annealing technique. By mechano-chemical polishing, the IC substrates are thinned, and then joined together. Operation of function blocks such as an inverter and ring oscillator stacked in the 3-D IC is confirmed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>