High-Brightness Polarized Green InGaN/GaN Light-Emitting Diode Structure with Al-Coated p-GaN Grating

Abstract

The potential of polarized light sources in liquid-crystal displays has been extensively pursued due to the large energy savings as compared to conventional light sources. Here, we demonstrate high-brightness polarized green light emission from an InGaN/GaN light-emitting diode (LED) structure by combining the strong coupling between surface plasmons (SPs) and multiple quantum wells and polarization effects of SPs. As compared to the as-grown LED structure, a significant enhancement is observed in the total light emission with a high polarization degree of 54%. This work might provide an efficient way to realize simple, compact, and high-efficiency polarized light emission devices for applications in electro-optical integration.