Comparative study of the effect of swift heavy ion irradiation at 500 °C and annealing at 500 °C on implanted silicon carbide

Abstract

TEM, RS and RBS were used to characterize polycrystalline SiC specimens individually implanted with 360 keV I⁺ or Kr⁺ ions at room temperature and thereafter either irradiated with 167 MeV Xe to a fluence of 5 × 10¹³ cm⁻² at 500 °C or annealed at 500 °C under vacuum.