Methods of creating and observing atomically reconstructed vertical Si{100}, {110}, and {111} side-surfaces

Abstract

Abstract We demonstrated the creation of atomically ordered side-surfaces and examined the perfection of the side-surface structures. Atomically reconstructed Si{100}, {110}, and {111} side-surfaces , which are perpendicular to planar surfaces, were first realized on three-dimensionally patterned Si substrates. The 2 × 1, 16 × 2, and 7 × 7 diffraction spots from the side-surfaces were confirmed by reflection high-energy electron diffraction. Epitaxial ultrathin metal and metal silicide films with an atomically matched lateral interface were grown on the side-surfaces. Methods of creating and observing well-defined surfaces enable the epitaxial growth of an arbitrary geometry, which becomes a key technique for nanoconstruction in three-dimensional space.