Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties

Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

Takashi Mukai, Motokazu Yamada, Shuji Nakamura · Japanese Journal of Applied Physics · 1999 · 754 citations

Engineering, Materials Engineering, Materials Science +17

InGaN-GaN multiquantum-well blue and green light-emitting diodes

Shoou‐Jinn Chang, Wei‐Chih Lai, Y.K. Su et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2002 · 253 citations

Engineering, Electrical Engineering, Materials Science +17

Pores in III–V Semiconductors

H. Föll, S. Langa, Jürgen Carstensen et al. · Advanced Materials · 2003 · 233 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Nanopores in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism

Danti Chen, Hongdi Xiao, Jung Han · Journal of Applied Physics · 2012 · 141 citations · Full text

Engineering, Materials Engineering, Materials Science +17

InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1998 · 94 citations

Engineering, Electrical Engineering, Materials Science +17