Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate

Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

Hideki Hirayama · Journal of Applied Physics · 2005 · 350 citations

Optical Materials, Engineering, Optoelectronic Devices +16

231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

Hideki Hirayama, Tohru Yatabe, Norimichi Noguchi et al. · Applied Physics Letters · 2007 · 343 citations

Aluminium Nitride, Electrical Engineering, Solid-state Lighting +10

Bistable conditions for low-temperature silicon epitaxy

B.S. Meyerson, F. J. Himpsel, Kevin J. Uram · Applied Physics Letters · 1990 · 188 citations

Engineering, Silicon Hydride, Integrated Circuits +19

Ultraviolet semiconductor laser diodes on bulk AlN

Michael Kneissl, Zhihong Yang, Mark Teepe et al. · Journal of Applied Physics · 2007 · 158 citations

Materials Science, Aluminium Nitride, Current-injection Ultraviolet Lasers +15

Reduction of threading dislocation densities in AlN∕sapphire epilayers driven by growth mode modification

Jie Bai, Michael Dudley, Wenhong Sun et al. · Applied Physics Letters · 2006 · 108 citations

Growth Mode Modification, Dipole Half Loop, Engineering +19