Concepedia

Effects of oxygen partial pressure and annealing temperature on the residual stress of hafnium oxide thin-films on silicon using synchrotron-based grazing incidence X-ray diffraction

Debaleen Biswas, A. K. Sinha, Supratic Chakraborty

Applied Surface Science · 2016 · 12 citations · 26 references

Concepts

Natural SciencesMaterials EngineeringMaterials ScienceMaterials CharacterizationMechanical Behavior Of MaterialsThin FilmsResidual StressSilicon MaterialsThin Film AnnealingThin Film Mechanical PropertiesX-ray CrystallographyX-ray DiffractionGrazing-incidence X-ray DiffractionOxygen Partial Pressure EffectsResidual Stress AnalysisResidual Stress In Thin FilmsSynchrotron DiffractionSynchrotron X-ray DiffractionThin Oxide Films

References

26

The Evolution of Silicon Wafer Cleaning Technology

Werner Kern · Journal of The Electrochemical Society · 1990 · 1.7K citations

Engineering, Electrical Engineering, Materials Science +17

Stress-related effects in thin films

John A. Thornton, David W. Hoffman · Thin Solid Films · 1989 · 1.1K citations

Natural Sciences, Materials Engineering, Materials Science +14

Physics of amorphous materials

G J Morgan · Polymer · 1991 · 943 citations

Natural Sciences, Materials Science, Physics +12

Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology

Werner Kern · Medical Entomology and Zoology · 1970 · 820 citations

Engineering, Materials Engineering, Materials Science +14

High-K materials and metal gates for CMOS applications

John Robertson, Robert M. Wallace · Materials Science and Engineering R Reports · 2014 · 766 citations · Full text

Engineering, Electrical Engineering, Materials Science +16