2011 · 21 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDopingElectronics TechnologySemiconductor Device MaterialsThermal Properties Of SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsDoping ProfilesHigh-temperature Device OperationHigh-temperature ElectronicsSemiconductor Doping ProfilesThermal Effects In Integrated CircuitsThermal Management Of Semiconductor DevicesThermo-mechanical StressWide Bandgap Semiconductor Applications
A new 91 mm diameter 4.5 kV IGCT (Integrated Gate Commutated Thyristor) with extraordinary Safe Operating Area (SOA) at 140°C is presented. Moreover the turn-off losses are reduced compared to the current High Power Technology HPT-IGCT range. The improvements for the new HPT+ IGCT were achieved by optimising the HPT’s corrugated p-base doping profiles. In addition, the metallisation has been improved for higher thermo-mechanical wear resistance.
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An IGCT chip set for 7.2 kV (RMS) VSI application
Iulian Nistor, Maxi Scheinert, Tobias Wikström et al. · 2008 · 12 citations