2007 · 37 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ScalingHigh-frequency Semiconductor DevicesIntegrated Circuit DesignWide-bandgap Semiconductor DevicesDevice Scaling EffectsHigh-power-density DesignPower DensityPower Density EnhancementPower Density Scaling
A 91 mm diameter IGCT with extraordinary safe operating area (SOA) is presented in this paper. The power density at turn-off reached values as high as 700 W/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which is twice the previously reported SOA limit for devices with a comparable diameter. The improvement was achieved by masking one of the p-base diffusions, giving the p-base a corrugated appearance as well as improving the gate circuit.
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