Tobias Wikström - Concepedia

Author

Tobias Wikström

ABB (Switzerland)

Also Known As

T. Wikstrom, T. Wikström, Tobias Wikstrom, Tobias Wikström, Tobias Wikström

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

ABB (Switzerland)University of Cambridge Element Six (United Kingdom)

About

Tobias Wikström is an author at ABB (Switzerland) specializing in electrical engineering, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	12	1.6K
2	Electrical Engineering	12	12	1.6K
3	Applied Physics	4	4	1.4K
4	Computer Engineering	4	4	75
5	Natural Sciences	2	2	48

Tobias Wikström

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond Jan Isberg, J. Hammersberg, Erik M. J. Johansson, Science Diamond-like CarbonElectrical EngineeringEngineeringPhysicsElectronic Engineering	2002	1.3K
High-voltage single-crystal diamond diodes Daniel J. Twitchen, Andrew J. Whitehead, Steven E. Coe, IEEE Transactions on Electron Devices SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesEngineering	2004	125
Recent advancements in IGCT technologies for high power electronics applications Umamaheswara Vemulapati, Munaf Rahimo, Martin Arnold, Low-power ElectronicsElectrical EngineeringEngineeringPower DeviceNanoelectronics	2015	46
The Corrugated P-Base IGCT - a New Benchmark for Large Area SQA Scaling Tobias Wikström, Thomas Stiasny, Munaf Rahimo, EngineeringComputer ArchitectureNew BenchmarkPower Electronic SystemsPower Electronics	2007	35
The Destruction Mechanism in GCTs Neophytos Lophitis, Marina Antoniou, Florin Udrea, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringPhysicsDestruction Mechanism	2013	32
IGCTs: High-Power Technology for power electronics applications Iulian Nistor, Tobias Wikström, M. Scheinert Electrical EngineeringNew Igct ChipEngineeringPower DeviceElectronic Engineering	2009	27
Experimental study on plasma engineering in 6500 V IGBTs Tobias Wikström, F. Bauer, Stefan Linder, Electrical EngineeringCareful DesignEngineeringPower DeviceBias Temperature Instability	2002	20
Rugged MMC converter cell for high power applications B. Odegard, David M. Weiss, Tobias Wikström, Igct SemiconductorsElectrical EngineeringMmc Converter CellEngineeringEnergy Conversion	2016	19
Parameters influencing the maximum controllable current in gate commutated thyristors Neophytos Lophitis, Marina Antoniou, Florin Udrea, IET Circuits Devices & Systems	2014	17
Experimentally validated three dimensional GCT wafer level simulations Neophytos Lophitis, Marina Antoniou, Florin Udrea, EngineeringInductive Switching ConditionsComputer-aided DesignPower ElectronicsGate Commutated Thyristor	2012	16

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