IEEE Transactions on Electron Devices · 2013 · 34 citations · 10 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCarrier TransportDevice CharacterizationDevice ModelingDevice ReliabilityDevice SimulationSemiconductor ReliabilityBreakdown SimulationCompact Device ModelingDevice DegradationHot-carrier DegradationJunction ModelingMechanismsReliability DegradationWear-out Mechanisms
This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models.
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New design approach for ultra high power GCT thyristor
K. Satoh, K. Morishita, N. Hirano et al. · 2003 · 25 citations
Engineering, Computer Engineering, Electrical Engineering +11