Maxi Scheinert

Interface-roughness-induced broadening of intersubband electroluminescence in p-SiGe and n-GaInAs∕AlInAs quantum-cascade structures

Soichiro Tsujino, A. Borak, E. Müller et al. · Applied Physics Letters · 2005 · 98 citations · Full text

Natural Sciences, Materials Science, Physics +17

Hall mobility of narrow Si0.2Ge0.8–Si quantum wells on Si0.5Ge0.5 relaxed buffer substrates

Soichiro Tsujino, C.V. Falub, E. Müller et al. · Applied Physics Letters · 2004 · 28 citations

Engineering, Materials Science, Physics +17

Intersubband Raman laser from GaInAs∕AlInAs double quantum wells

Maxi Scheinert, H. Sigg, Soichiro Tsujino et al. · Applied Physics Letters · 2007 · 26 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

An IGCT chip set for 7.2 kV (RMS) VSI application

Iulian Nistor, Maxi Scheinert, Tobias Wikström et al. · 2008 · 12 citations

Engineering, Electrical Engineering, Microelectronics +15

Strategies to Improve Optical Gain and Waveguide Loss in Strain-Compensated SiGe Quantum Cascade Mid-Infrared Emitters

Soichiro Tsujino, H. Sigg, Maxi Scheinert et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2006 · 11 citations

Engineering, Materials Engineering, Materials Science +17