Concepedia

Modular integration of annular TSV structures filled with tungsten in a 0.25μm SiGe:C BiCMOS technology

S. Marschmeyer, J. Berthold, Andreas Krüger, Marco Lisker, A. Scheit, S. Schulze, A. Trusch, Matthias Wietstruck, D. Wolansky

Microelectronic Engineering · 2014 · 12 citations · 2 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIii-v SemiconductorsIntegrated Circuit DesignIntegrated Circuit DevicesIntegrated Circuit FabricationBicmos TechnologyIntegration Of Iii-v MaterialsModular System IntegrationSige Bicmos DesignSystem-in-package IntegrationTungsten InterconnectsTungsten-based Materials

References

2

RF Model and Verification of Through-Silicon Vias in Fully Integrated SiGe Power Amplifier

Hsien‐Yuan Liao, Hwann‐Kaeo Chiou · IEEE Electron Device Letters · 2011 · 13 citations

Engineering, Electrical Engineering, Microelectronics +16

3D Integration Techniques Applied to SiGe Power Amplifiers

Ramana Malladi, Alvin Joseph, Peter Lindgren et al. · ECS Transactions · 2008 · 11 citations

Engineering, Electrical Engineering, Microelectronics +16