Influence of Nitrogen on Dislocation Mobility in Czochralski Silicon

Abstract

Abstract. Additions of oxygen, boron, and phosphorus are well known to affect appreciably the dislocation dynamics in silicon single crystals. However, there are few reports on the effect of nitrogen on the mechanical strength, despite it’s using as dopant when growing large diameter silicon crystals CZ-Si. We have studied the effect of nitrogen (N) doping on the plastic properties and mobility individual dislocations in 300 mm CZ-silicon. Three point loadings were used for dislocation mobility and starting stresses measurements in the temperature range of 500 – 700 ºC. It is shown that N-doping causes the decrease of dislocation mobility and increase starting stress. Possible mechanisms of hardening of silicon single crystals are discussed due to interaction of dislocations with impurities.