Concepedia

R. Falster

RF

101

Publications

4.1K

Citations

34

H-Index

1985

Active since

Affiliations

SunEdison (Italy)(Current)

University of Oxford

Institut für Solarenergieforschung

SunEdison (United States)

Ural Institute of Metals

R. Falster is an author at SunEdison (Italy) specializing in applied physics, engineering, and materials science.

Top concepts

Applied PhysicsEngineeringMaterial SciencePhysicsCrystalline DefectsMicroelectronicsChemistryDefect ToleranceMicrostructureSemiconductors

Publications per year

1985–2022

101

Publications

101

Vacancy-type microdefect formation in Czochralski silicon

V. V. Voronkov, R. Falster · Journal of Crystal Growth · 1998 · 208 citations

Applied Physics, Semiconductor Material, Semiconductor Device Fabrication +2

On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing

R. Falster, V. V. Voronkov, F. Quast · physica status solidi (b) · 2000 · 207 citations

Materials Science, Wafer Processing, Engineering +15

Intrinsic Point Defects and Impurities in Silicon Crystal Growth

V. V. Voronkov, R. Falster · Journal of The Electrochemical Society · 2002 · 165 citations

Impurity Interstitials, Engineering, Crystal Growth Technology +16

Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments

Mohan V. Jacob, P. Pichler, H. Ryssel et al. · Journal of Applied Physics · 1997 · 155 citations · Full text

Platinum Diffusion Experiments, Point Defects, Engineering +19

Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon

V. V. Voronkov, R. Falster · Journal of Crystal Growth · 1999 · 153 citations

Materials Engineering, Materials Science, Ii-vi Semiconductor +9

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