Nanoscale · 2015 · 28 citations · 41 references
EngineeringElectrical EngineeringMaterials ScienceOptical MaterialsOptoelectronicsPhotonicsLight SourcesLight-emitting DiodesOptoelectronic DevicesOptoelectronic MaterialsPhotonic MaterialsWide Band Gap SemiconductorsDirectional Light ControlExtraction EfficiencyGreen Light-emitting DiodesInternal Quantum EfficiencyLight ExtractionLight Extraction EfficiencyLight-emitting DevicesScattering
Green LEDs do not show the same level of performance as their blue and red cousins, greatly hindering the solid-state lighting development, which is the so-called "green gap". In this work, nano-void photonic crystals (NVPCs) were fabricated to embed within the GaN/InGaN green LEDs by using epitaxial lateral overgrowth (ELO) and nano-sphere lithography techniques. The NVPCs act as an efficient scattering back-reflector to outcouple the guided and downward photons, which not only boost the light extraction efficiency of LEDs with an enhancement of 78% but also collimate the view angle of LEDs from 131.5° to 114.0°. This could be because of the highly scattering nature of NVPCs which reduce the interference giving rise to Fabry-Perot resonance. Moreover, due to the threading dislocation suppression and strain relief by the NVPCs, the internal quantum efficiency was increased by 25% and droop behavior was reduced from 37.4% to 25.9%. The enhancement of light output power can be achieved as high as 151% at a driving current of 350 mA. Giant light output enhancement and directional control via NVPCs point the way towards a promising avenue of solid-state lighting.
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Origin of efficiency droop in GaN-based light-emitting diodes
Minho Kim, M. Schubert, Qi Dai et al. · Applied Physics Letters · 2007 · 1.3K citations · Full text
Engineering, Electrical Engineering, Materials Engineering +17
Scattering of electrons at threading dislocations in GaN
Nils Weimann, L.F. Eastman, D. Doppalapudi et al. · Journal of Applied Physics · 1998 · 615 citations