Very high temperature operation of diamond Schottky diode

Abstract

For the first time, the operating temperature of a Schottky diode structure has been pushed to 1000/spl deg/C. The diode structure consists of a Si-based Schottky material deposited onto a homoepitaxial boron doped diamond surface. At high temperatures, the forward I-V characteristics are dominated by the thermionic emission (n/spl ap/1.01) across a barrier of 1.9 eV height. The reverse characteristics are still dominated by thermally activated defects. The series resistance shows thermal activation associated with the boron doping.