EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesBipolar Junction TransistorsDevice CharacterizationDevice ModelingGate Drive CircuitsThermal ManagementThermal Properties Of SemiconductorsDrive Circuit DesignHeat Sink DesignHeat Sink MaterialsInsulated PackagingInsulated-gate Field-effect TransistorsThermal Effects In Integrated CircuitsThermal Management Of Semiconductor DevicesThermal Stability
The current balance, thermal stability, and switching behavior characteristics of parallel insulated-gate bipolar transistors (IGBTs) are analyzed. The influences of heat sink mounting, lay-out, and the drive circuit are described in order to demonstrate the best way to parallel IGBTs for optimum performance. An example of two paralleled IGBTs in a fully insulated package is discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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