2005 · 12 citations · 9 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave OscillatorsMicrowave Semiconductor DevicesOscillatorsResonant CircuitsWide-bandgap Semiconductor DevicesCircuit SimulationElectron MobilityHigh-electron-mobility TransistorsHigh-frequency ElectronicsLarge-signal AnalysisLarge-signal BehaviorResonant TunnelingTunneling Diodes
A novel oscillation circuit using a resonant-tunneling diode (RTD) is proposed. The circuit has a simple configuration consisting of an RTD, a high-electron-mobility transistor (HEMT), and an inductor. A large oscillation swing that substantially exceeds the RTD negative differential resistance region can be obtained, since the oscillation is based on the RTD switching between the peak and valley states. To analyze the large-signal behavior, circuit simulation has been carried out. It was found that the oscillation frequency increases by increasing the RTD peak current density j/sub p/ or by decreasing the inductance L. A frequency as high as 180 GHz has been predicted when j/sub p/=1/spl times/10/sup 5/ A/cm/sup 2/ and L=0.1 nH.
9
Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes
E. R. Brown, J. R. Söderström, C. D. Parker et al. · Applied Physics Letters · 1991 · 796 citations
Engineering, Electrical Engineering, Electronic Materials +16