Power and stability limitations of resonant tunneling diodes

Abstract

Stability criteria for resonant tunneling diodes are investigated. Details of how extrinsic elements, such as series inductance and parallel capacitance, affect the stability are presented. A GaAs/AlAs/InGaAs/AlAs/GaAs double-barrier diode is investigated, showing the effect of different modes of low-frequency oscillation and the extrinsic circuit required for stabilization. The effect of device stabilization on high-frequency power generation is described. The main conclusions of the paper are: (1) stable resonant tunneling diode operation is difficult to obtain, and (2) the circuit and device conditions required for stable operation greatly reduce the amount of power that can be produced by these devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>