Publication | Open Access
Electronic and Structural Characteristics of Zinc-Blende Wurtzite Biphasic Homostructure GaN Nanowires
37
Citations
15
References
2007
Year
Materials ScienceWide-bandgap SemiconductorElectrical EngineeringStructural CharacteristicsZinc-blende Crystalline PhasesEngineeringNanomaterialsNanotechnologyApplied PhysicsSingle NanowiresGan Power DeviceGallium Nitride NanowiresNanostructure SynthesisNanoscale ScienceCategoryiii-v SemiconductorSemiconductor Nanostructures
We report a new biphasic crystalline wurtzite/zinc-blende homostructure in gallium nitride nanowires. Cathodoluminescence was used to quantitatively measure the wurtzite and zinc-blende band gaps. High-resolution transmission electron microscopy was used to identify distinct wurtzite and zinc-blende crystalline phases within single nanowires through the use of selected area electron diffraction, electron dispersive spectroscopy, electron energy loss spectroscopy, and fast Fourier transform techniques. A mechanism for growth is identified.
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