A 0.4-V Low Noise Amplifier Using Forward Body Bias Technology for 5 GHz Application

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> A fully integrated low noise amplifier (LNA) suitable for ultra low voltage and ultra low power applications is proposed and demonstrated in 0.13 <formula formulatype="inline"><tex>$\mu$</tex></formula>m CMOS technology. In order to meet the requirement of ultra low voltage applications, a two-stage common-source configuration is employed. By using forward-body-biased metal oxide semiconductor field effect transistors, the proposed LNA can operate at 0.4 V supply voltage, successfully demonstrating the application potential of dynamic threshold voltage technology in the radio frequency region. The experimental results show that the proposed LNA has a 10.3 dB power gain and a 5.3 dB noise figure, while consuming only 1.03 mW dc power with an ultra low supply voltage of 0.4 V. </para>