IEEE Microwave and Wireless Components Letters · 2007 · 103 citations · 7 references
Low-power ElectronicsElectrical EngineeringRadio Frequency RegionEngineeringRf SemiconductorMixed-signal Integrated CircuitMw Dc PowerComputer EngineeringNoiseGhz ApplicationUltra Low VoltageMicroelectronicsRf Subsystem
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> A fully integrated low noise amplifier (LNA) suitable for ultra low voltage and ultra low power applications is proposed and demonstrated in 0.13 <formula formulatype="inline"><tex>$\mu$</tex></formula>m CMOS technology. In order to meet the requirement of ultra low voltage applications, a two-stage common-source configuration is employed. By using forward-body-biased metal oxide semiconductor field effect transistors, the proposed LNA can operate at 0.4 V supply voltage, successfully demonstrating the application potential of dynamic threshold voltage technology in the radio frequency region. The experimental results show that the proposed LNA has a 10.3 dB power gain and a 5.3 dB noise figure, while consuming only 1.03 mW dc power with an ultra low supply voltage of 0.4 V. </para>
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Low-power 5 GHz LNA and VCO in 90 nm RF CMOS
D. Linten, Lars Aspemyr, Wutthinan Jeamsaksiri et al. · 2004 · 87 citations