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High frequency noise characteristics of RF MOSFETs in subthreshold region
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2003
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Bias ConditionsElectrical EngineeringSemiconductor DeviceEngineeringChannel NoiseRf SemiconductorHigh-frequency DeviceRadio FrequencyElectronic EngineeringBias Temperature InstabilityApplied PhysicsRf MosfetsNoiseMicroelectronicsMicrowave EngineeringRf SubsystemFull-chip Rfcmos DesignElectromagnetic Compatibility
High frequency noise characteristics of 0.13um and 0.18um n-type MOSFET across a full range of bias conditions is presented in this paper. Focus is mainly on nMOSFET's behavior in "off" state, which is not predicted accurately by existing commercial models. This is a region especially important for full-chip RFCMOS design. In this paper, noise parameters (NFmin, RN, /spl Gamma/opt) up to 6GHz are investigated in detail. From the device perspective, the power spectral density of channel noise and induced gate noise is also studied to understand how MOSFETs actually operate from strong inversion to weak inversion and depletion.