1982 · 20 citations · 3 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignMemory HierarchyMemory Hierarchy DesignMemory Subsystem DesignPower ManagementLow-power Memory ArchitectureManufacturing Yield EfficiencyManufacturing Yield ImprovementMemory Circuit DesignPolysiliconPower-efficient Memory DesignStatic Power DissipationStatic Random-access Memory Design
A fully-static 8K×8b RAM using HICMOSII technology with a typical address access time of 65ns and power dissipation of 200mW will be discussed. To improve manufacturing yield a laser redundancy technique utilizing a N+ -i-N+ polysilicon structure was employed.
3
A fault-tolerant 64K dynamic RAM
R.P. Cenker, D.G. Clemons, W.R. Huber et al. · 1979 · 66 citations
Engineering, Computer Engineering, Electrical Engineering +16
Redundancy techniques for fast static RAMs
Kimmo Kokkonen, P. Sharp, Rob Albers et al. · 1981 · 43 citations
Engineering, Computer Engineering, Electrical Engineering +15
O. Minato, T. Masuhara, Takeshi Sasaki et al. · 1981 · 18 citations
Engineering, Computer Engineering, Electrical Engineering +13