Modeling of enhanced 1/ƒ noise in TFT with trap charges

Abstract

We have investigates influence of existing trap states of TFT on device characteristics with use of the compact model HiSIM-TFT. Special focus is given on the 1/f noise characteristics, where it is found the V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> dependence of the 1/f noise characteristics is very sensitive to the trap density distributions. We have successfully extracted high density of the shallow trap states with the measured 1/f noise characteristics.