Concepedia

Trap State Analysis

Trap State Analysis is a characterization method used in electronic material science that identifies and quantifies localized energy states within the bandgap of a semiconductor material, which trap charge carriers and thereby influence electrical and optoelectronic properties.

224

Publications

8.9K

Citations

918

Authors

338

Institutions

Publications per year

2017–2026

46

Parents

Publications

224

Electron traps in bulk and epitaxial GaAs crystals

G. M. Martin, A. Mitonneau, A. Mircéa · Electronics Letters · 1977 · 730 citations

, , +16

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Jungwoo Joh, Jesús A. del Alamo · IEEE Transactions on Electron Devices · 2010 · 416 citations

, , +17

Evidence of water-related discrete trap state formation in pentacene single-crystal field-effect transistors

C. Goldmann, David J. Gundlach, B. Batlogg · Applied Physics Letters · 2006 · 156 citations · Full text

, , +17

Dependence of hydrogen-induced lattice defects and hydrogen embrittlement of cold-drawn pearlitic steels on hydrogen trap state, temperature, strain rate and hydrogen content

Tomoki Doshida, Kenichi Takai · Acta Materialia · 2014 · 153 citations

, , +17

The evaluation of thermally stimulated current curves

T. A. T. Cowell, J. Woods · British Journal of Applied Physics · 1967 · 149 citations

, , +12

1–5 of 224

Authors

918

  1. BK
    B. Kaczer

    IMEC, Belgium

    4 publications · 118 citations

    4

    h-index

  2. GG
    G. Groeseneken

    IMEC, Belgium

    4 publications · 121 citations

    4

    h-index

  3. RP
    R. Pässler

    Chemnitz University of Technology, Germany

    3 publications · 45 citations

    3

    h-index

  4. AN
    Austin Nevin

    Politecnico di Milano, Italy

    3 publications · 94 citations

    3

    h-index

  5. DC
    Daniela Comelli

    Politecnico di Milano, Italy

    3 publications · 94 citations

    3

    h-index

1–5 of 918

Institutions

338

  1. Centre National de la Recherche Scientifique

    Paris, France

    7 h-index

    24 publications

    757 citations

  2. The University of Tokyo

    Tokyo, Japan

    6 h-index

    10 publications

    464 citations

  3. Chinese Academy of Sciences

    Beijing, China

    6 h-index

    16 publications

    998 citations

  4. Hong Kong University of Science and Technology

    Hong Kong, Hong Kong

    6 h-index

    19 publications

    1.2K citations

  5. IMEC

    Leuven, Belgium

    5 h-index

    36 publications

    980 citations

  6. Ruđer Bošković Institute

    Zagreb, Croatia

    5 h-index

    11 publications

    394 citations

  7. University of Bologna

    Bologna, Italy

    5 h-index

    16 publications

    460 citations

  8. Johannes Gutenberg University Mainz

    Mainz, Germany

    4 h-index

    14 publications

    396 citations

1–8 of 338

Venues

  1. Applied Physics Letters

    20 publications · 1.1K citations

    17

    h-index

  2. Journal of Applied Physics

    21 publications · 655 citations

    14

    h-index

  3. Electronics Letters

    7 publications · 937 citations

    7

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 6 publications · 121 citations

    6

    h-index

  5. IEEE Transactions on Electron Devices

    6 publications · 622 citations

    6

    h-index

1–5