Proceedings of the IEEE · 1999 · 206 citations · 12 references
EngineeringComputer EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesCmos Circuit DesignConfigurable Logic BlocksDigital Integrated Circuit DesignDigital Logic DesignDynamic Power ReductionLow-power Digital Circuit DesignClocked LogicCmos Logic CircuitsLatch DesignLogic GatesResonant TunnelingResonant Tunneling DevicesSilicon-on-insulator CmosSilicon-on-insulator Technology
We describe a new family of clocked logic gates based on the resonant-tunneling diode (RTD). Pairs of RTDs form storage latches, and these are connected by networks consisting of field-effect transistors (FETs), saturated resistors, and RTDs. The design, operation, and expected performance of both a shift register and a matched filter using this logic are discussed. Simulations show that the RTD circuits can achieve higher performance in terms of speed and power in many signal processing applications. Compared to circuits using III-V FETs alone, the RTD circuits are expected to run nearly twice as fast at the same power or at the same speed with reduced power. Compared to circuits using Lincoln Laboratory's fully depleted silicon-on-insulator CMOS, implementation using state-of-the-art RTDs should operate five times faster when both technologies follow the CMOS design rules.
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Resonant tunneling in semiconductor double barriers
L. L. Chang, L. Esaki, Raphael Tsu · Applied Physics Letters · 1974 · 1.9K citations
Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes
E. R. Brown, J. R. Söderström, C. D. Parker et al. · Applied Physics Letters · 1991 · 796 citations
Engineering, Electrical Engineering, Electronic Materials +16
Picosecond switching time measurement of a resonant tunneling diode
J.F. Whitaker, G. Mourou, T. C. L. G. Sollner et al. · Applied Physics Letters · 1988 · 117 citations