K.M. Molvar

Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes

E. R. Brown, J. R. Söderström, C. D. Parker et al. · Applied Physics Letters · 1991 · 796 citations

Engineering, Electrical Engineering, Electronic Materials +16

A new RTD-FET logic family

R.H. Mathews, J.P. Sage, T. C. L. G. Sollner et al. · Proceedings of the IEEE · 1999 · 206 citations

Engineering, Computer Engineering, Electrical Engineering +17

Design Considerations for 1.06-<tex>$mu$</tex>m InGaAsP–InP Geiger-Mode Avalanche Photodiodes

J.P. Donnelly, Erik K. Duerr, K. A. McIntosh et al. · IEEE Journal of Quantum Electronics · 2006 · 135 citations

Engineering, Electrical Engineering, Materials Science +17

GaN avalanche photodiodes operating in linear-gain mode and Geiger mode

S. Verghese, K. A. McIntosh, R. J. Molnar et al. · IEEE Transactions on Electron Devices · 2001 · 97 citations

Engineering, Electrical Engineering, Materials Engineering +17

High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

Michael J. Manfra, Nils Weimann, Julia W. P. Hsu et al. · Journal of Applied Physics · 2002 · 83 citations

Engineering, Materials Engineering, Materials Science +17