Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits

Uniaxial-process-induced strained-Si: extending the CMOS roadmap

Scott E. Thompson, Guangyu Sun, Youn Sung Choi et al. · IEEE Transactions on Electron Devices · 2006 · 585 citations

Engineering, Electrical Engineering, Materials Science +17

Scanning X-ray microdiffraction with submicrometer white beam for strain/stress and orientation mapping in thin films

Nobumichi Tamura, Alastair A. MacDowell, Ralph Spolenak et al. · Journal of Synchrotron Radiation · 2003 · 268 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Influence of annealing conditions on the mechanical and microstructural behavior of electroplated Cu-TSV

Chukwudi Okoro, Kris Vanstreels, Riet Labie et al. · Journal of Micromechanics and Microengineering · 2010 · 111 citations

Natural Sciences, Materials Engineering, Materials Science +17

Crystal plasticity in Cu damascene interconnect lines undergoing electromigration as revealed by synchrotron x-ray microdiffraction

Arief Suriadi Budiman, William D. Nix, Nobumichi Tamura et al. · Applied Physics Letters · 2006 · 101 citations

Natural Sciences, Materials Engineering, Materials Science +17

Interfacial Effects During Thermal Cycling of Cu-Filled Through-Silicon Vias (TSV)

Praveen Kumar, I. Dutta, Muhannad S. Bakir · Journal of Electronic Materials · 2011 · 100 citations · Full text

Engineering, Materials Engineering, Materials Science +17