Heavy-Ion-Induced Digital Single Event Transients in a 180 nm Fully Depleted SOI Process

Abstract

Heavy- ion-induced single events transients (SETs) in advanced digital circuits are a significant reliability issue for space-based systems. SET pulse widths in silicon-on-insulator (SOI) technologies are often significantly shorter than those in comparable bulk technologies. In this paper, heavy-ion-induced digital single-event transient measurements are presented for a 180-nm fully depleted SOI technology. Upset cross-sections for this technology with and without body-ties are analyzed using 3-D TCAD simulations. Pulse broadening is shown to lengthen the measured SET pulse widths significantly for the circuit without body contacts.