High current density InN∕AlN heterojunction field-effect transistor with a SiNx gate dielectric layer

Abstract

In N ∕ Al N metal-insulator-semiconductor heterojunction field-effect transistors with a gate-modulated drain current and a clear pinch-off characteristic have been demonstrated. The devices were fabricated using high-quality InN (26nm)∕AlN (100nm) epifilms grown by plasma-assisted molecular-beam epitaxy on Si (111) substrates. The devices exhibited a current density higher than ∼530mA∕mm with a 5μm gate length. The pinch-off voltage was at ∼−7V with an associated drain leakage current less than 10μA∕mm. The observed high current density may be attributed to the high sheet carrier density due to the large spontaneous polarization difference between InN and AlN.