2002 · 80 citations · 9 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCurrent-voltage CharacteristicsDevice CharacterizationDevice ModelingDevice SimulationIii-v SemiconductorsSemiconductor Device MaterialsCurrent-voltage CharacterizationCurrent-voltage RelationshipElectron MobilityHigh-electron-mobility TransistorsI-v Curve MeasurementOn-wafer Measurement TechniquesSemiconductor Device CharacterizationSemiconductor Device Modeling
The authors build and utilized a pulsed I-V system which is capable of reaching any current-voltage point of three-terminal devices from any arbitrarily chosen DC bias point. The system, which can be used on wafer, serves as an invaluable tool for device modeling and process diagnostics. Direct dependence of the pulsed I-V curves on the DC bias was found in GaAs MESFETs and HEMTs (high-electron mobility transistors).< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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