IEEE Transactions on Electron Devices · 1973 · 18 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCurrent-voltage CharacteristicsDevice CharacterizationDevice ModelingField-effect TransistorsIntegrated Circuit DesignIntegrated Circuit DevicesCapacitanceCmos Logic CircuitsCurrent-voltage CharacterizationCurrent-voltage RelationsCurrent-voltage RelationshipDepletion-mode TransistorsDigital Logic CircuitsLoad
Recently, the depletion-type IGFET became widely used as a load device in logic circuits. The purpose of this correspondence is to present a development of the current-voltage characteristic of a depletion-type IGFET based on the assumption that the non-linear semiconductor capacitance can be replaced by a constant average capacitance. This approximation is justified in light of the theoretical and experimental results obtained by many authors [1]-[4], indicating that the exact form of the semiconductor capacitance has little effect on the dc characteristics of a field-effect device.
3
Basic limits on the properties of field-effect transistors
I. Richer · Solid-State Electronics · 1963 · 21 citations