A low-cost modular SiGe BiCMOS technology and analog passives for high-performance RF and wide-band applications

Abstract

We present a low-cost 0.25 /spl mu/m SiGe BiCMOS technology that is being manufactured in an 8-inch production line. The technology includes modules for super-self-aligned (SSA) SiGe transistors, poly resistors, metal-oxide-metal (MOM) capacitors and thick-metal inductors added to a CMOS core process without any change to the CMOS process. With the independently developed modules and a high-energy implanted collector buried layer, SiGe bipolar devices with a maximum f/sub T/ of 72 GHz and f/sub max/ of 116 GHz, and thick metal inductors with Q/spl ges/15 have been produced. Using this technology, IC chips fabricated have demonstrated essential optical network interface functions with 4:1 MUX and 1:4 DEMUX circuits operated at 10 Gb/s, and limiting amplifiers performing at 20 Gb/s.