IEEE Transactions on Circuits and Systems I Regular Papers · 2009 · 10 citations · 17 references
EngineeringComputer EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesCmos Circuit DesignDevice ModelingDigital Logic DesignIntegrated Circuit DesignIntegrated Circuit DevicesMetal-oxide-semiconductor Field-effect TransistorsLimitsResonant Tunneling Devices
Resonant-tunneling-diode (RTD)-based monostable-bistable logic element (MOBILE) circuits operate properly in a certain frequency range. They exhibit both a minimum operating frequency and a maximum one. From a design point of view, it should be desirable to have gates with a correct operation from dc up to the maximum operating frequency (i.e., without the minimum bound). This paper undertakes this problem by analyzing how transistors and RTDs interact in RTD-based circuits. Two malfunctions have been identified: the incorrect evaluation of inputs and the lack of self-latching operation. The difficulty to study these problems in an analytical way has been overcome by resorting to series expansions for both the RTD and the heterojunction field-effect transistor I- <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> characteristics in the points of interest. We have obtained analytical expression linking representative device parameters and technological setup, for a MOBILE-based circuit to operate correctly.
17
Digital circuit applications of resonant tunneling devices
Pinaki Mazumder, S. Kulkarni, Mukul Bhattacharya et al. · Proceedings of the IEEE · 1998 · 441 citations
Engineering, Computer Engineering, Electrical Engineering +15
Resonant tunneling diodes: models and properties
Jian Sun, G.I. Haddad, Pinaki Mazumder et al. · Proceedings of the IEEE · 1998 · 340 citations