ZnCdO/ZnO – a new heterosystem for green‐wavelength semiconductor lasing

Abstract

Abstract We report on our efforts to cultivate the ternary compound ZnCdO as a semiconductor laser material. Molecular beam epitaxy far from thermal equilibrium allows us to overcome the standard solubility limit and to fabricate alloys with band gaps ranging from 3.4 down to 2.1 eV. Optimized structures containing well‐defined quantum wells as active zones are capable of low‐threshold lasing under optical pumping up to room temperature. The longest lasing wavelength achieved so far is 510 nm.