Publication | Closed Access
21.3: 4.0 In. QVGA AMOLED Display Using In‐Ga‐Zn‐Oxide TFTs with a Novel Passivation Layer
54
Citations
7
References
2009
Year
Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringNovel Passivation LayerEngineeringDisplay TechnologyOxide ElectronicsApplied PhysicsThreshold VoltageGallium OxideHigh Saturation MobilityMicroelectronicsAdvanced Display TechnologySio X
Abstract We have developed a 4.0 inch QVGA AMOLED display using amorphous In‐Ga‐Zn‐Oxide TFTs, focusing on a passivation layer. Threshold voltage of the TFTs can be controlled to have “normally off” characteristics by using SiO x with a low hydrogen content. Besides, small subthreshold swing and high saturation mobility are obtained.
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