Toshinari Sasaki - Concepedia

Author

Toshinari Sasaki

Semiconductor Energy Laboratory (Japan)

Also Known As

Toshinari Sasaki

Publications

360

Citations

H-Index

Concepts

All Affiliations

Semiconductor Energy Laboratory (Japan)

About

Toshinari Sasaki is an author at Semiconductor Energy Laboratory (Japan) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	253
2	Applied Physics	5	5	236
3	Electrical Engineering	4	4	198
4	Materials Science	2	2	99
5	Computer Engineering	1	1	25

Toshinari Sasaki

Publications

352

Citations

H-Index

Page 1

	Year	Citations
Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor Hiroki Inoue, Takanori Matsuzaki, Shuhei Nagatsuka, IEEE Journal of Solid-State Circuits	2012	99
Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In–Ga–Zn-Oxide Thin Film Transistor Hiromichi Godo, Daisuke Kawae, Shuhei Yoshitomi, Japanese Journal of Applied Physics EngineeringTemperature DependenceThin Film Process TechnologyElectronic StructureSemiconductors	2010	61
4.0-inch Active-Matrix Organic Light-Emitting Diode Display Integrated with Driver Circuits Using Amorphous In–Ga–Zn-Oxide Thin-Film Transistors with Suppressed Variation Hiroki Ohara, Toshinari Sasaki, Kousei Noda, Japanese Journal of Applied Physics EngineeringOrganic ElectronicsOptoelectronic DevicesIntegrated CircuitsSemiconductor Device	2010	58
21.3: 4.0 In. QVGA AMOLED Display Using In‐Ga‐Zn‐Oxide TFTs with a Novel Passivation Layer Hiroki Ohara, Toshinari Sasaki, Kousei Noda, SID Symposium Digest of Technical Papers Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringNovel Passivation LayerEngineering	2009	54
P‐9: Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In‐Ga‐Zn‐Oxide TFT Hiromichi Godo, Daisuke Kawae, Shuhei Yoshitomi, SID Symposium Digest of Technical Papers Materials ScienceNumerical AnalysisAmorphous In‐ga‐zn‐oxide TftIi-vi SemiconductorEngineering	2009	38
1Mb Non-Volatile Random Access Memory Using Oxide Semiconductor Takanori Matsuzaki, Hiroki Inoue, Shuhei Nagatsuka, Non-volatile MemoryOxide SemiconductorMemory DesignEngineeringEmerging Memory Technology	2011	25
9-2: Optical Compensation Method for Wide Viewing Angle IPS LCD Using a Plastic Substrate Shinichiro Oka, Toshinari Sasaki, Takaya Tamaru, SID Symposium Digest of Technical Papers Plastic SubstrateSheet LcdOptical Compensation MethodEngineeringFlexible Electronics	2016	17

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