Publication | Closed Access
P‐9: Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In‐Ga‐Zn‐Oxide TFT
38
Citations
7
References
2009
Year
Materials ScienceNumerical AnalysisAmorphous In‐ga‐zn‐oxide TftIi-vi SemiconductorEngineeringElectronic MaterialsOxide ElectronicsApplied PhysicsCondensed Matter PhysicsTemperature DependenceGallium OxideSemiconductor MaterialAmorphous SolidV Th ShiftTft Characteristics
Abstract We fabricated inverted‐staggered amorphous In‐Ga‐Zn‐O (a‐IGZO) TFTs and measured temperature dependence of the TFT characteristics. A V th shift between 120°C and 180°C was as large as about 4 V. In the analysis with 2‐D numerical simulation, we could reproduce the measured result by assuming two kinds of donor‐like states as carrier generation sources.
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