SID Symposium Digest of Technical Papers · 2009 · 38 citations · 7 references
Natural SciencesElectrical EngineeringMaterials ScienceCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsAmorphous Electronic MaterialsAmorphous MaterialsAmorphous SemiconductorsAmorphous SolidsSemiconductor Device MaterialsSemiconductor PhysicsAmorphous Oxide SemiconductorsAmorphous OxidesAmorphous Thin FilmsCarrier GenerationElectronic Structure Of Amorphous MaterialsNumerical Device SimulationNumerical SimulationTemperature Dependence
Abstract We fabricated inverted‐staggered amorphous In‐Ga‐Zn‐O (a‐IGZO) TFTs and measured temperature dependence of the TFT characteristics. A V th shift between 120°C and 180°C was as large as about 4 V. In the analysis with 2‐D numerical simulation, we could reproduce the measured result by assuming two kinds of donor‐like states as carrier generation sources.
7
Hydrogen as a Cause of Doping in Zinc Oxide
Chris G. Van de Walle · Physical Review Letters · 2000 · 2.2K citations · Full text
Anderson Janotti, Chris G. Van de Walle · Applied Physics Letters · 2005 · 1.2K citations
Defect energetics in ZnO: A hybrid Hartree-Fock density functional study
Fumiyasu Oba, Atsushi Togo, Isao Tanaka et al. · Physical Review B · 2008 · 732 citations · Full text