Shuhei Yoshitomi

Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In–Ga–Zn-Oxide Thin Film Transistor

Hiromichi Godo, Daisuke Kawae, Shuhei Yoshitomi et al. · Japanese Journal of Applied Physics · 2010 · 61 citations

Natural Sciences, Materials Science, Physics +17

4.0-inch Active-Matrix Organic Light-Emitting Diode Display Integrated with Driver Circuits Using Amorphous In–Ga–Zn-Oxide Thin-Film Transistors with Suppressed Variation

Hiroki Ohara, Toshinari Sasaki, Kousei Noda et al. · Japanese Journal of Applied Physics · 2010 · 58 citations

Engineering, Electrical Engineering, Materials Science +17

21.3: 4.0 In. QVGA AMOLED Display Using In‐Ga‐Zn‐Oxide TFTs with a Novel Passivation Layer

Hiroki Ohara, Toshinari Sasaki, Kousei Noda et al. · SID Symposium Digest of Technical Papers · 2009 · 54 citations

Engineering, Electrical Engineering, Materials Science +17

P‐9: Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In‐Ga‐Zn‐Oxide TFT

Hiromichi Godo, Daisuke Kawae, Shuhei Yoshitomi et al. · SID Symposium Digest of Technical Papers · 2009 · 38 citations

Natural Sciences, Electrical Engineering, Materials Science +17

49.4: High‐definition Top‐emitting AMOLED Display with Highly Reliable Oxide Semiconductor Field Effect Transistors

Nozomu Sugisawa, Toshiki Sasaki, Takahiro Ushikubo et al. · SID Symposium Digest of Technical Papers · 2011 · 34 citations

Engineering, Electrical Engineering, Materials Science +12