Spacer Removal Technique for Boosting Strain in n-Channel FinFETs With Silicon-Carbon Source and Drain Stressors

Abstract

A novel and low-cost spacer removal technique proved successful in further enhancing the I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Dsat</sub> performance of already strained n-channel trigate FinFETs with SiC source and drain (S/D) stressors. This extra enhancement is attributed to increased longitudinal tensile channel stress as a result of increased stress coupling efficiency from the SiC S/D stressors to the channel. The electrical results also establish that this extra enhancement will become even more significant as physical gate lengths are scaled down.