Concepedia

Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs

Alessio Griffoni, Jeroen van Duivenbode, Dimitri Linten, Eddy Simoen, Paolo Rech, Luigi Dilillo, F. Wrobel, Patrick Verbist, G. Groeseneken

IEEE Transactions on Nuclear Science · 2012 · 51 citations · 24 references

DOI

Concepts

Abstract

50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-junction, IGBT and SiC) from different vendors. A strong dependence on the device type and orientation is observed.

References

24

Destructive single-event effects in semiconductor devices and ICs

F.W. Sexton · IEEE Transactions on Nuclear Science · 2003 · 265 citations

, , +17

Nuclear physics of cosmic ray interaction with semiconductor materials: Particle-induced soft errors from a physicist's perspective

Haotian Tang · IBM Journal of Research and Development · 1996 · 109 citations

, , +14

Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout

S. Kuboyama, Chihiro Kamezawa, Naomi Ikeda et al. · IEEE Transactions on Nuclear Science · 2006 · 103 citations · Full text

, , +17

First observations of power MOSFET burnout with high energy neutrons

D.L. Oberg, J.L. Wert, E. Normand et al. · IEEE Transactions on Nuclear Science · 1996 · 98 citations

, , +10

Neutron-induced single event burnout in high voltage electronics

E. Normand, J.L. Wert, D.L. Oberg et al. · IEEE Transactions on Nuclear Science · 1997 · 90 citations

, , +15