Publication | Closed Access
Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs
50
Citations
24
References
2012
Year
Device TypeElectrical EngineeringEngineeringPower DeviceMev Neutron-induced FailureBias Temperature InstabilityApplied PhysicsPower Semiconductor DeviceNeutron-induced FailureDifferent VendorsPower ElectronicsDevice ReliabilityMicroelectronicsSemiconductor Device
50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-junction, IGBT and SiC) from different vendors. A strong dependence on the device type and orientation is observed.
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