200 MeV proton damage effects on multi-quantum well laser diodes

Abstract

200 MeV proton damage effects on multi-quantum well GaAs/GaAlAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60/spl times/10/sup -15/ cm/sup 2//p for different bias conditions and from 1.52 to 3.58/spl times/10/sup -15/ cm/sup 2//p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at I/sub bias/=35 mA.