A.L. Barry

Energy dependence of electron damage and displacement threshold energy in 6H silicon carbide

A.L. Barry, B. Lehmann, Daniel Fritsch et al. · IEEE Transactions on Nuclear Science · 1991 · 127 citations

Engineering, Radiation Materials Science, Semiconductor Device +16

The energy dependence of lifetime damage constants in GaAs LEDs for 1-500 MeV protons

A.L. Barry, A. Houdayer, P.F. Hinrichsen et al. · IEEE Transactions on Nuclear Science · 1995 · 90 citations

Defect Tolerance, Electrical Engineering, Solid-state Lighting +13

Neutron damage equivalence in GaAs

Patrick Griffin, J.G. Kelly, T.F. Luera et al. · IEEE Transactions on Nuclear Science · 1991 · 34 citations · Full text

Simulation Fidelity, Engineering, Nuclear Physics +16

An improved displacement damage monitor LED

A.L. Barry, R. Maxseiner, R. Wojcik et al. · IEEE Transactions on Nuclear Science · 1990 · 31 citations

Engineering, Measurement, Education +17

Response of GaAs displacement damage monitors to protons, electrons, and gamma radiation

A.L. Barry, R. Wojcik, Andrew MacDiarmid · IEEE Transactions on Nuclear Science · 1989 · 22 citations

Engineering, Nuclear Physics, Measurement +28