An improved displacement damage monitor LED

Abstract

A frequency-domain technique for measuring carrier lifetime in GaAs light-emitting-diode (LED) displacement damage monitors capable of high sensitivity and repeatability is developed. Applications of this technique that take advantage of the high sensitivity of this method, including the measurement of the threshold energy for lattice displacement in GaAs, are described. The measured minimum electron energy for displacement damage was 270+or-15 keV, corresponding to a threshold atomic displacement energy of 10.0+or-0.7 eV, assuming the defect is a displaced arsenic atom.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>