D. Bräunig - Concepedia

Author

D. Bräunig

Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute

Also Known As

D . Bräunig, D Braunig, D Bräunig, D. BRÄUNIG, D. Braunig, D. Bräunig, Dieter Bräunig

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute German Orient Foundation Communications Research Centre Canada

About

D. Bräunig is an author at Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	20	1.2K
2	Applied Physics	13	14	557
3	Chemical Engineering	5	5	441
4	Natural Sciences	4	4	87
5	Education	1	1	31

D. Bräunig

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Efficient CuInS2 solar cells from a rapid thermal process (RTP) Kai Siemer, Jo Klaer, I. Luck, Solar Energy Materials and Solar Cells Materials ScienceChemical EngineeringElectrical EngineeringEngineeringEnergy Efficiency	2001	331
Efficient thin-film solar cells prepared by a sequential process J. Klaer, J. Bruns, R. Henninger, Semiconductor Science and Technology Materials ScienceElectrical EngineeringSequential ProcessThin-film Solar CellsEngineering	1998	248
Energy dependence of electron damage and displacement threshold energy in 6H silicon carbide A.L. Barry, B. Lehmann, Daniel Fritsch, IEEE Transactions on Nuclear Science EngineeringRadiation Materials ScienceSemiconductor DeviceDisplacement DamagePower Semiconductors	1991	127
Generation of Oxide Charge and Interface States by Ionizing Radiation and by Tunnel Injection Experiments M. Knoll, D. Bräunig, W. R. Fahrner IEEE Transactions on Nuclear Science Electrical EngineeringIon ImplantationTunnel Injection ExperimentsLarger Electron DensityPhysics	1982	73
Comparative studies of tunnel injection and irradiation on metal oxide semiconductor structures M. Knoll, D. Bräunig, W. R. Fahrner Journal of Applied Physics EngineeringTunnel InjectionSemiconductor MaterialsIrradiation ExperimentsSemiconductor Device	1982	60
Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments K. Töpper, J. Bruns, Roland Scheer, Applied Physics Letters EngineeringCuins2 Thin FilmsPhoto-electrochemical CellChemistryLuminescence Property	1997	55
Admittance spectroscopy of efficient CuInS2 thin film solar cells Joachim Kneisel, Kai Siemer, I. Luck, Journal of Applied Physics Ii-vi SemiconductorElectrical EngineeringEngineeringPhysicsThermal Admittance Spectroscopy	2000	47
Bias-temperature stress on metal-oxide-semiconductor structures as compared to ionizing irradiation and tunnel injection G. Haller, M. Knoll, D. Bräunig, Journal of Applied Physics EngineeringBt StressTunnel InjectionBias TemperatureSemiconductor Device	1984	37
An improved displacement damage monitor LED A.L. Barry, R. Maxseiner, R. Wojcik, IEEE Transactions on Nuclear Science EngineeringMeasurementEducationCarrier LifetimeDisplay Technology	1990	31
9.2% efficient CuInS2 mini-module Jo Klaer, Kai Siemer, I. Luck, Thin Solid Films EngineeringHardware AccelerationEnergy EfficiencyAdvanced ComputingComputer Engineering	2001	27

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