IEEE Photonics Technology Letters · 2000 · 12 citations · 8 references
EngineeringElectrical EngineeringPhysicsOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDopingLaser PhysicsOptical Properties Of SemiconductorsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsCarrier ConfinementDoping ProfilesHeterostructure DevicesHeterostructure LasersLeakagePower OutputSemiconductor Doping ProfilesSemiconductor Laser Diodes
We have investigated the dependence of the light-current characteristics of broad-area lasers with different p-doping profiles for a two-step separate-confinement heterostructure (SCH) 1.55-μm InGaAs-InP laser. A sizable increase of the optical output power is observed in a structure with delta doping at the heterointerfaces and moderate doping in the thick SCH layer. It is also shown that the characteristic temperature (T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> ) of the structure with delta doping at the heterointerfaces and moderate doping at the thick SCH layer is almost constant as the measurement temperature is increased. Such an improvement in device performance is attributed to a reduction of carrier leakage to the SCH layer.
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