Concepedia

High-temperature characteristics of 1.3-μm InAsP-InAlGaAs ridge waveguide lasers

M. Yamada, T. Anan, K. Tokutome, S. Sugou

IEEE Photonics Technology Letters · 1999 · 29 citations · 4 references

DOI

Concepts

Abstract

High-temperature characteristics of InAsP-InAlGaAs strained multiquantum-well (MQW) lasers with a large conduction band discontinuity (/spl Delta/E/sub c/) are demonstrated. The InAsP-InAlGaAs MQW ridge waveguide lasers with narrow stripes exhibited a characteristic temperature as high as 143 K in the range from 25/spl deg/C to 85/spl deg/C. This material system is promising for developing a cooling-system-free 1.3-μm laser.

References

4

High-performance uncooled 1.3-μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications

Chung-En Zah, R. Bhat, Bhadresh Pathak et al. · IEEE Journal of Quantum Electronics · 1994 · 338 citations

, , +17

High-power and high-efficiency1.3 µm InAsP compressively-strained MQW lasersat high temperatures

H. Oohashi, S. Seki, T. Hirono et al. · Electronics Letters · 1995 · 42 citations

, , +17

High temperature characteristic <i>T</i> <sub>0</sub> and low threshold current density of1.3 µm InAsP/InGaP/InP compensated strain multiquantum wellstructure lasers

A. Ougazzaden, A. Mircéa, C. Kazmierski · Electronics Letters · 1995 · 29 citations

, , +17

1.3 µm InAsP/InAlGaAs MQW lasers for high-temperatureoperation

T. Anan, M. Yamada, K. Tokutome et al. · Electronics Letters · 1997 · 19 citations

, , +17