Electrochemical and Solid-State Letters · 2009 · 18 citations · 16 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsNanomaterialsNanotechnologyAtomic Layer DepositionMemory DevicesNanoelectronicsQuantum DotsSemiconductor Device MaterialsSemiconductor NanomaterialsCapacitance-voltage MeasurementsElectron Beam EvaporationFlatband VoltageNanocrystalsNonvolatile MemoryNonvolatile Memory DevicesRapid Thermal AnnealingThermal Annealing
Pt nanocrystals using HfO2 as tunneling and control layers were investigated for nonvolatile memory application. A Pt layer was deposited by electron-beam evaporation and transformed into well-separated nanocrystals by rapid thermal annealing at 700 degrees C. The fabricated Pt nanocrystals had a density of 2.1x10(12) cm(-2) and an average size of 3.7 nm. The capacitance-voltage measurements demonstrate that the nonvolatile memory with Pt nanocrystals had a memory effect with similar to 0.9 V flatband voltage shift under a gate voltage of 5 V. The device showed a competitive retention characteristic with a charge loss rate of 20% after 10(4) s.
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A silicon nanocrystals based memory
Sandip Tiwari, Farhan Rana, Hussein Hanafi et al. · Applied Physics Letters · 1996 · 1.6K citations
Metal nanocrystal memories. I. Device design and fabrication
Zhe Liu, C. Lee, Vijay Narayanan et al. · IEEE Transactions on Electron Devices · 2002 · 482 citations